msf 4 n 65 65 0v n - channel mosfet publication order num ber: [ msf 4 n 6 5 ] ? bruckewell technology corporation rev. a - 2014 description the msf 4 n 65 is a n - channel enhancement - mode mosfet , providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 220f package is universally preferred for all co mmercial - industrial applications features ? originative new design ? 100% eas test ? rugged gate oxide technology ? extremely low intrinsic capacitances ? remarkable switching characteristics ? unequalled gate charge: 15 nc (typ.) ? extended safe operatin g area ? lower rds(on) : 2.4 (typ.) @vgs=10v a pplication ? low power battery chargers ? switch mode power supply (smps) ? dc - ac converters packing & order information 50/tube ; 1,000/box graphic symbol maximum ratings and electrical char acteristics absolute maximum ratings symbol parameter value unit v dss drain - source voltage 600 v v gs gate - source voltage 30 v i d drain current - continuous (tc=25 c ) 4.0 a drain current - continuous (tc= 100 c ) 2.3 a i dm drain current pulsed 14.4 a i ar avalanche current 4.5 a e as s ingle pulsed avalanche energy 240 mj
msf 4 n 65 65 0v n - channel mosfet publication order num ber: [ msf 4 n 6 5 ] ? bruckewell technology corporation rev. a - 2014 absolute maximum ratings symbol parameter value unit e ar repetitive avalanche energy 3.6 mj dv/dt peak diode recovery dv/dt 5.5 v/ns p d total power dissipation (tc=25 c) derati ng factor above 25 c 33 w 0.26 w/ c t j ,t stg operating and storage temperature range - 55 to +150 c t l maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 c ? drain current limited by maximum junction temperature therm al c haracteristics (tc=25c unless otherwise noted) symbol parameter max. unit s r jc junction - to - case 3.3 c /w r ja junction - to - ambient 62.5 on characteristics symbol parameter test conditions min typ. max. unit s v gs (th) gate threshold voltage v ds = v gs ,i d = 250a ds(on) static drain - source on - resistance v gs = 10 v ,i d = 3.0 a -- 2.0 2.5 off characteristics symbol parameter test conditions min typ. max. unit s b v dss drain - source breakdown voltage v gs = 0 v , i d = 250a dss / j breakdown voltage temperature coefficient i d = 250a, referenced to dss zero gate voltage drain current v ds = 60 0 v , v gs = 0 v v ds = 48 0 v , t c = 125 c -- -- 1 10 a gss f gate - body leakage current, forward v gs = 3 0 v , v d s = 0 v -- -- 100 n a i gss r gate - body leakage current, reverse v gs = - 3 0 v , v d s = 0 v -- -- - 100 n a dynamic characteristics symbol parameter test conditions min typ. max. unit s c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0mhz -- 545 710 pf c oss output capacitance -- 60 80 pf c rss reverse transfer capacitance -- 8 11 pf
msf 4 n 65 65 0v n - channel mosfet publication order num ber: [ msf 4 n 6 5 ] ? bruckewell technology corporation rev. a - 2014 switching characteristics symbol parameter test conditions min typ. max. unit s t d(on) turn - on time v ds = 325 v, i d = 4.0 a, r g = 25 r turn - on time -- 35 80 ns t d(off) turn - off delay time -- 45 100 ns tf turn - off fall time -- 40 90 ns q g total gate charge v ds = 52 0 v,i d = 4.0 a , v gs = 10 v -- 15 20 nc q gs gate - source charge -- 2.8 -- nc q g d gate - drain charge -- 6.0 -- nc source - drain diode maximum ratings and characteristics symbol parameter test conditions min typ. max. unit s i s continuous source - drain diode forward current -- -- 3.6 a i sm pulsed source - drain diode forward current -- -- 16 v sd source - dra in diode forward voltage i s = 4.0 a , v gs = 0 v -- -- 1.5 v t rr reverse recovery time i f = 4.0 a , v gs = 0 v dif/dt=100a/s rr reverse recovery charge -- 2.2 -- notes; 1. repetitive rating: pulse width limited by maximum junction temperature 2. i as = 4a , v dd =5 0 v, r g =25 w , starting t j =25 3. i sd Q 4 a, di/dt Q 3 00a/ s,v dd Q bv dss , starting t j =25 4. puls e test: pulse width Q 300 s, duty cycle Q 2% 5. essentially independent of operating temperature
msf 4 n 65 65 0v n - channel mosfet publication order num ber: [ msf 4 n 6 5 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig.1 - on region characteristics fig. 2 - transfer characteristics fig.3 - on resistance variation vs drain current and gate voltage fig.4 - body diode forward voltage variation with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
msf 4 n 65 65 0v n - channel mosfet publication order num ber: [ msf 4 n 6 5 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig. 7 - breakdown voltage variation vs temperature fig. 8 - on - resistance variation vs temperature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature fig.11 - transient thermal response curve
msf 4 n 65 65 0v n - channel mosfet publication order num ber: [ msf 4 n 6 5 ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change wit hout notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any error s, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuin g production of any product. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, conseque ntial or incidental damages. (iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performan ce may vary over time. product specifications do not expand or otherwise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
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